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(February 26, 2008) NEWPORT, WALES and ATLANTA, GA — Surface Technology Systems (STS)announced that Georgia Institute of Technology (Georgia Tech) ordered a Pegasus Deep Reactive Ion Etch (DRIE) tool for their new Nanotechnology Research Center Building (NRCB), which is due for completion in fall 2008. Georgia Tech is the first university to acquire the latest generation of STS' advanced silicon etch (ASE) systems.
"This tool will enable us to push the boundaries of our own technological developments in areas such as micro and nano electromechanical resonators, RF MEMS filters, and MEMS inertial sensors." said Associate Professor Farrokh Ayazi, Ph.D. who leads the Integrated MEMS Laboratory at Georgia Tech and is on the faculty of the School of Electrical and Computer Engineering.
"We are very proud to receive this order from such a renowned university in MEMS research." said Eizo Yasui, CEO of STS. "This is the first Pegasus we have sold to a US university and only the fifth research institute worldwide to install this capability."
The NRCB will reportedly be one of the most advanced nanotechnology facilities in the US. Located on the Georgia Tech campus in Atlanta, the 188,000-square-foot facility will feature 30,000 square feet of clean room space that will be critical in helping faculty to create the latest research, educational, and economic development breakthroughs in nanoscience, nanotechnology, microelectronics, semiconductors, materials, medicine and pharmaceuticals.
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